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| SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). High Forward Transfer Admittance. A KTK211 N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR L E B L Extremely Low Reverse Transfer Capacitance. : Crss=0.1pF(Typ.) G : |yfs| =9mS(Typ.) 2 H 3 1 P P MAXIMUM RATING (Ta=25 CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VGDO IG PD Tj Tstg RATING -18 10 150 150 -55 150 UNIT V mA mW K DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N M 1. GATE 2. DRAIN 3. SOURCE SOT-23 Marking I DSS Rank Type Name Lot No. K ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Gate-Drain Breakdown Voltage Drain Current Gate-Source Cut-off Voltage Foward Transfer Admittance Reverse Transfer Capacitance Power Gain Noise Figure Note : IDSS Classification IGSS ) TEST CONDITION VGS=-0.5V, VDS=0 IG=-100 A VGS=0, VDS=10V VDS=10V, ID=1 A VDS=10V, VGS=0, f=1kHz VGD=-10V, f=1MHz VDD=10V, f=100MHz (Fig.) VDD=10V, f=100MHz (Fig.) MIN. -18 1.0 -0.4 TYP. 9 0.10 18 2.5 MAX. -10 15 -4.0 0.15 3.5 UNIT nA V mA V mS pF dB dB SYMBOL V(BR)GDO IDSS (Note) VGS(OFF) |yfs| Crss GPS NF O:1.0 3.0, Y:2.5 6.0, GR(G):5.0 10.0, BL(B):9.0 15.0 2003. 2. 25 Revision No : 2 J D 1/3 KTK211 Fig. 100MHz GPS, NF TEST CIRCUIT INPUT R g =50 10pF 20pF L1 RS G 0.005F D S 10pF OUTPUT RL=50 20pF L2 0.005F VDD L1 : 0.8mm Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH. L1 : 0.8mm Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH. KTK211 is measured at each group by changing RS. GROUP KTK211 - O KTK211 - Y KTK211 - GR KTK211 - BL 18 100 200 RS( 0 5% 5% 5% ) 2003. 2. 25 Revision No : 2 2/3 KTK211 y is , y os - f FORWARD REVERSE TRANSFER ADMITTANCE yfs , y rs (mS) INPUT,OUTPUT ADMITTANCE y is , y os (mS) 50 30 10 5 3 1 0.5 0.3 0.1 10 30 100 300 1k b is b os g is g os COMMON SOURCE VDS =10V VGS =0 Ta=25 C y fs , yrs - f 30 10 5 3 1 0.5 0.3 0.1 g fs COMMON SOURCE VDS =10V VGS =0 Ta=25 C b fs b rs g rs 3k 10k 10 30 100 300 1k 3k 5k FREQUENCY f (MHz) FREQUENCY f (MHz) y is - V DS OUTPUT ADMITTANCE yos (mS) 10 INPUT ADMITTANCE y is (mS) 5 3 b is I DS =5mA(I DSS) 2 0.5 COMMON SOURCE f=100MHz Ta=25 C y os - VDS 10 5 3 1 0.5 0.3 0.1 0.05 0.02 4 6 8 10 12 14 16 18 20 22 DRAIN-SOURCE VOLTAGE V DS (V) g os b os I DS =5mA(I DSS ) 2 0.5 COMMON SOURCE f=100MHz Ta=25 C 1 0.5 0.3 g is I DS =5mA(I DSS ) 2 0.5 I DS =5mA(I DSS ) 2 0.5 0.1 4 6 8 10 12 14 16 18 20 22 DRAIN-SOURCE VOLTAGE V DS (V) y fs - V DS FORWARD TRANSFER ADMITTANCE y fs (mS) 30 COMMON SOURCE f=100MHz Ta=25 C 10 5 3 g fs (I DSS ) I DS =5mA 2 0.5 -b fs (I DSS) I DS =5mA 2 1 0.5 4 6 8 10 12 0.5 14 16 DRAIN-SOURCE VOLTAGE V DS (V) 2003. 2. 25 Revision No : 2 3/3 |
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